Semiconductor device and method for fabricating the same

ABSTRACT

A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean Patent Application No.10-2010-0140493, filed on Dec. 31, 2010, which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION

Exemplary embodiments of the present invention relate to a method forfabricating a semiconductor device, and more particularly, to asemiconductor device that may decrease parasitic capacitance between bitlines and storage node contact plugs and a method for fabricating thesemiconductor device.

In a semiconductor device such as a Dynamic Random Access Memory (DRAM)device, a capacitor and a bit line perform an electrical operationthrough a source/drain contact. As semiconductor devices shrink, storagenode contact plugs (SNC) and bit lines (or bit line contacts) have to beformed within a small area. In this case, the storage node contact plugsand the bit lines are laid adjacent to each other with a thin spacerbetween them. The spacer is typically a nitride layer, such as a siliconnitride layer.

Generally, a silicon nitride layer has a high dielectric rate and thusit is not effective in suppressing the parasitic capacitance (Cb)between bit lines and storage node contact plugs.

Therefore, the parasitic capacitance between bit lines and storage nodecontact plugs may increase, and an increase in the parasitic capacitancedecreases a sensing margin.

SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention are directed to asemiconductor device that may decrease the parasitic capacitance betweenbit lines and storage node contact plugs, and a method for fabricatingthe semiconductor device.

In accordance with an exemplary embodiment of the present invention, asemiconductor device includes a plurality of first conductive patternsseparated by a damascene pattern, a second conductive pattern buried inthe damascene pattern, and a spacer comprising an air gap between thesecond conductive pattern and the first conductive patterns.

The semiconductor device may further include a capping layer configuredto hermetically seal an upper portion of the air gap. The spacer mayinclude a silicon nitride layer. The spacer may include a first spacerand a second spacer, and the air gap may be disposed between the firstspacer and the second spacer. The first spacer and the second spacer mayinclude a silicon nitride layer. The first spacer may include a siliconnitride layer and the second spacer may comprise an oxide layer.

In accordance with another exemplary embodiment of the presentinvention, a method for forming a semiconductor device includes forminga first conductive layer, forming a damascene pattern and firstconductive patterns by etching the first conductive layer, forming aspacer on sidewalls of the damascene pattern, forming a secondconductive pattern buried in the damascene pattern, and forming an airgap between the first conductive patterns and the second conductivepattern by etching a portion of the spacer.

The forming of the spacer may comprise forming multiple spacerscomprising a sacrificial spacer selected from the group consisting of atitanium nitride layer, an aluminum oxide layer, and a silicon layer,and the air gap may be formed by removing the sacrificial spacer.

In accordance with another exemplary embodiment of the presentinvention, a method for forming a semiconductor device includes forminga first conductive layer, forming a damascene pattern and firstconductive patterns by etching the first conductive layer, forming adual spacer, comprising a sacrificial spacer and a spacer, on sidewallsof the damascene pattern, forming a second conductive pattern buried inthe damascene pattern, and forming an air gap by etching the sacrificialspacer.

The sacrificial spacer may be a titanium nitride layer, and the spacermay be a silicon nitride layer. The sacrificial spacer may be analuminum oxide layer or a silicon layer, and the spacer may be a siliconnitride layer.

In the forming of the dual spacer, the sacrificial spacer may be formedby oxidizing a sidewall of the first conductive patterns exposed by thedamascene pattern. The first conductive patterns may include a tungstenlayer, and the sacrificial spacer may comprise a tungsten oxide layer.

In accordance with another exemplary embodiment of the presentinvention, a method for forming a semiconductor device includes forminga first conductive layer, forming a damascene pattern and firstconductive patterns by etching the first conductive layer, forming atriple spacer, comprising a first spacer, a sacrificial spacer, and asecond spacer, on sidewalls of the damascene pattern, forming a secondconductive pattern buried in the damascene pattern, and forming an airgap by etching the sacrificial spacer.

The sacrificial spacer may include any one selected from the groupconsisting of a titanium nitride layer, an aluminum oxide layer, and asilicon layer. The first spacer may include a silicon oxide layer, andthe sacrificial spacer may comprise a titanium nitride layer, and thesecond spacer may comprise a silicon nitride layer. The first spacer mayinclude a silicon nitride layer, and the sacrificial spacer may comprisea titanium nitride layer, and the second spacer may comprise a siliconnitride layer. The first spacer may include a tungsten oxide layer, andthe sacrificial spacer may comprise a titanium nitride layer, and thesecond spacer may comprise a silicon nitride layer.

The first conductive patterns may include storage node contact plugs,and the second conductive pattern may comprise a bit line. The storagenode contact plugs may include a polysilicon layer or a tungsten layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view of a semiconductor device in accordance with afirst exemplary embodiment of the present invention.

FIG. 1B is a cross-sectional view of the semiconductor device of FIG. 1Ataken along a line A-A′.

FIGS. 2A to 2K are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with the firstexemplary embodiment of the present invention.

FIG. 3 is a cross-sectional view of a semiconductor device in accordancewith a second exemplary embodiment of the present invention.

FIGS. 4A to 4I are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with the secondexemplary embodiment of the present invention.

FIGS. 5A to 5C are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a third exemplaryembodiment of the present invention.

FIGS. 6A to 6K are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a fourth exemplaryembodiment of the present invention.

FIGS. 7A to 7G are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a fifth exemplaryembodiment of the present invention.

FIG. 8A is a plan view of a semiconductor device in accordance with asixth exemplary embodiment of the present invention.

FIG. 8B is a cross-sectional view of the semiconductor device of FIG. 8Ataken along a line B-B′.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Exemplary embodiments of the present invention will be described belowin more detail with reference to the accompanying drawings. The presentinvention may, however, be embodied in different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the present invention tothose skilled in the art. Throughout the disclosure, like referencenumerals refer to like parts throughout the various figures andembodiments of the present invention.

The drawings are not necessarily to scale and in some instances,proportions may have been exaggerated in order to clearly illustratefeatures of the embodiments. When a first layer is referred to as being“on” a second layer or “on” a substrate, it not only refers to a casewhere the first layer is formed directly on the second layer or thesubstrate, but also a case where a third layer exists between the firstlayer and the second layer or the substrate.

FIG. 1A is a plan view of a semiconductor device in accordance with afirst exemplary embodiment of the present invention, and FIG. 1B is across-sectional view of the semiconductor device of FIG. 1A taken alonga line A-A′.

Referring to FIGS. 1A and 1B, an isolation layer 22 is formed over asemiconductor substrate 21. The isolation layer 22 defines activeregions 23. First landing plugs 24A and a second landing plug 24B areformed over the active regions 23. Over the first landing plugs 24A,storage node contact plugs 28A and 28B are formed. Over the secondlanding plug 24B, bit lines 34A are formed. The bit lines 34A isolatethe storage node contact plugs 28A and 28B from each other. The storagenode contact plugs 28A and 28B are formed as the bit lines 34A isolatedual storage node contact plugs. The bit lines 34A are formed by etchingan inter-layer insulation layer 25 to thereby form a damascene patternand then filling the inside of the damascene pattern. Therefore, the bitlines 34A are referred to as damascene bit lines. The damascene patternseparates the dual storage node contact plugs into storage node contactplugs 28A and 28B. A bit line hard mask layer pattern 35A is formed overthe bit lines 34A. A barrier layer 33A is formed on the sidewalls andbottom surface of each bit line 34A. An air gap 36 and a spacer 32 areformed between the bit lines 34A and the storage node contact plugs 28Aand 28B. The spacer 32 may be a nitride layer such as a silicon nitridelayer. The storage node contact plugs 28A and 28B may be a polysiliconlayer. A hard mask pattern 29A is formed on the upper portion of thestorage node contact plugs 28A and 28B and the inter-layer insulationlayer 25. A capping layer 37 hermetically sealing the upper portion ofthe air gap 36 is also formed. In the drawing, a reference symbol ‘BG’shown in FIG. 1A denotes a buried gate.

According to the first exemplary embodiment of the present inventiondescribed above, the air gap 36 and the spacer 32 are between thestorage node contact plugs 28A and 28B and the bit lines 34A. Theparasitic capacitance between the storage node contact plugs 28A and 28Band the bit lines 34A may be decreased by forming the air gap 36 betweenthe storage node contact plugs 28A and 28B and the bit lines 34A.

FIGS. 2A to 2K are cross-sectional views taken along a line A-A′ of FIG.1A to illustrate a method for fabricating a semiconductor device inaccordance with the first exemplary embodiment of the present invention.

Referring to FIG. 2A, the isolation layer 22 is formed over thesemiconductor substrate 21. The isolation layer 22 is formed through awell-known Shallow Trench Isolation (STI) process. The isolation layer22 defines the active regions 23. Although not illustrated in FIG. 2A, aprocess for forming buried gates (BG) may be performed after theisolation layer 22 is formed. The buried gates BG are not shown in FIG.2A because they are not viewable from a cross-section view taken alongthe line A-A′. However, it should be understood that the buried gatesmay be formed through a conventional method for forming buried gates.

Subsequently, first landing plugs 24A to be coupled with storage nodecontact plugs and a second landing plug 24B to be coupled with a bitline are formed on the surface of the active regions 23. The firstlanding plugs 24A and the second landing plug 24B may be formed to beself-aligned to the isolation layer 22. The first landing plugs 24A andthe second landing plug 24B may be formed of a polysilicon layer.

According to another exemplary embodiment, the first landing plugs 24Aand the second landing plug 24B may be formed prior to the isolationlayer 22. For example, the first landing plugs 24A and the secondlanding plug 24B may be formed by forming a conductive layer to be usedas the first landing plugs 24A and the second landing plug 24B, and thenetching the conductive layer through an STI process. Subsequently,trenches are formed by using the first landing plugs 24A and the secondlanding plug 24B as etch barriers and etching the semiconductorsubstrate 21. Then, the isolation layer 22 can be formed by filling thetrenches.

Returning to the exemplary embodiment of FIG. 2A, after forming thefirst landing plugs 24A and the second landing plug 24B, the inter-layerinsulation layer 25 is formed over the resultant substrate structure.The inter-layer insulation layer 25 may be an oxide layer, such as BPSG(Boron Phosphorus Silicate Glass).

Next, the inter-layer insulation layer 25 is etched by using a storagenode contact mask 26 as an etch barrier. As a result, dual storage nodecontact holes 27 are formed. Each of the dual storage node contact holes27 simultaneously opens the first landing plugs 24A on the upperportions of neighboring active regions 23.

Referring to FIG. 2B, the storage node contact mask 26 is removed, andthen a dual storage node contact plug 28 filling the dual storage nodecontact holes 27 is formed. The dual storage node contact plug 28 isformed by depositing a polysilicon layer and performing a ChemicalMechanical Polishing (CMP) or an etch-back process.

Referring to FIG. 2C, a damascene mask 29 is formed. The damascene mask29 is a mask designed to separate the dual storage node contact plug 28and to form a damascene pattern where bit lines are subsequently formed.The damascene mask 29 may be a photoresist pattern or a hard maskpattern. Hereafter, the damascene mask 29 is referred to as a hard maskpattern 29. The hard mask pattern 29 may be a nitride layer, such as asilicon nitride layer.

The dual storage node contact plug 28 and the inter-layer insulationlayer 25 are etched by using the hard mask pattern 29 as an etchbarrier. As a result, a damascene pattern 30 is formed, and the storagenode contact plugs 28A and 28B that are independent from each other dueto the damascene pattern 30 are formed. Also, the damascene pattern 30exposes the second landing plug 24B and the isolation layer 22. Thedamascene pattern 30 may be formed by etching the dual storage nodecontact plug 28 first and then etching the inter-layer insulation layer25. Alternatively, it is possible to form the damascene pattern 30 byetching the inter-layer insulation layer 25 first and then etching thedual storage node contact plug 28 or by simultaneously etching theinter-layer insulation layer 25 and the dual storage node contact plug28.

Referring to FIG. 2D, a sacrificial spacer 31 is formed on the sidewallsof the damascene pattern 30. The sacrificial spacer 31 may be a titaniumnitride (TiN) layer. The sacrificial spacer 31 may be formed bydepositing a first spacer layer (e.g., a titanium nitride (TiN) layer)over the substrate structure including the damascene pattern 30, andthen performing an etch-back process to remove portions (e.g.,horizontal surfaces) of the first spacer layer.

Referring to FIG. 2E, the spacer 32 is formed on the sidewalls of thesacrificial spacer 31. The spacer 32 may be a nitride layer, such as asilicon nitride layer. The spacer 32 may be formed by depositing asecond spacer layer (e.g., a nitride layer) over the substrate structureincluding the damascene pattern 30 with the sacrificial spacer 31, andthen performing an etch-back process to remove portions (e.g., selecthorizontal surfaces) of the second spacer layer.

As described above, the spacer 32 covers the sidewalls of thesacrificial spacer 31, and thus, a dual spacer, including thesacrificial spacer 31 and the spacer 32, is formed on the sidewalls ofthe damascene pattern 30. Where the sacrificial spacer 31 is a titaniumnitride layer, and the spacer 32 is a nitride layer, the dual spacer hasa structure of TiN—Si₃N₄ (which is TiN—N, hereafter).

The spacer 32 formed on the sidewalls of the storage node contact plugs28A and 28B may remain on the bottom surface. The remaining spacer 32prevents a short from occurring between a damascene bit line and thefirst landing plugs 24A. An additional mask is used to make the spacer32 remain on the bottom surface between the storage node contact plugs28A and 28B. The additional mask is a bit line contact mask that ispatterned to selectively expose the second landing plug 24B. The spacer32 provides a bit line contact which exposes the surface of the secondlanding plug 24B. Accordingly, the spacer 32 becomes a bit line spacer.

Referring to FIG. 2F, a conductive layer is formed over the substratestructure to fill the damascene pattern 30 with the spacer 32 formedtherein. Subsequently, the conductive layer remains inside the damascenepattern 30 by performing an isolation process such as ChemicalMechanical Polishing (CMP). As a result of the CMP process, the upperportion of the sacrificial spacer 31 is exposed. The conductive layerincludes a barrier layer 33 and a bit line conductive layer 34. The bitline conductive layer 34 may be formed of metal such as tungsten. Thebarrier layer 33 may be a titanium nitride (TiN) layer.

As described above, when the conductive layer, including the barrierlayer 33 and the bit line conductive layer 34, is formed, thesacrificial spacer 31 and the spacer 32 remain between the conductivelayer and the storage node contact plugs 28A and 28B. The sacrificialspacer 31 contacts the storage node contact plugs 28A and 28B, and thespacer 32 contacts the barrier layer 33.

Referring to FIG. 2G, the bit line conductive layer 34 is recessed to acertain depth. As a result, the bit lines 34A partially filling theinside of the damascene pattern 30 are formed. The bit lines 34A becomedamascene bit lines. When the bit line conductive layer 34 is recessed,the barrier layer 33 is simultaneously recessed as well. As a result, abarrier layer pattern 33A remains on the external walls and bottomsurface of the bit lines 34A.

When the bit line conductive layer 34 is recessed, an etch-back processis performed. During the etch-back process, the sacrificial spacer 31may be recessed to a certain depth. For example, when the barrier layer33 and the sacrificial spacer 31 are formed of the same material, theupper portion of the sacrificial spacer 31 is removed forming anotheropening that extends to a certain depth between the spacer 32 and thehard mask pattern 29.

Referring to FIG. 2H, a bit line hard mask layer 35 is formed over thesubstrate structure including the bit lines 34A. The bit line hard masklayer 35 may be a nitride layer such as a silicon nitride layer. The bitline hard mask layer 35 gap-fills the upper portion of the bit lines34A, and also, gap-fills the upper portion of the sacrificial spacer 31.

Referring to FIG. 21, the bit line hard mask layer 35 is planarized.Herein, the planarization of the bit line hard mask layer 35 isperformed targeting the upper portion of the sacrificial spacer 31 sothat the upper portion of the sacrificial spacer 31 is exposed. Theplanarization may be performed using a CMP process. As a result of theplanarization, the bit line hard mask layer pattern 35A remains on theupper portion of the bit lines 34A. Also, a portion of the hard maskpattern 29 is planarized. The remaining hard mask pattern 29 is denotedwith reference numeral 29A.

Referring to FIG. 2J, the sacrificial spacer 31 is selectively removed.As a result, the air gap 36 is formed between the storage node contactplugs 28A and 28B and the bit lines 34A. The sacrificial spacer 31 maybe removed through a wet etch process or a dry etch process. When thesacrificial spacer 31 is removed, the spacer 32, the storage nodecontact plugs 28A and 28B, the bit lines 34A, the bit line hard masklayer pattern 35A, and the inter-layer insulation layer 25 are notdamaged due to etch selectivity. The storage node contact plugs 28A and28B and the inter-layer insulation layer 25 are protected by the hardmask pattern 29A, and therefore, they are not removed when thesacrificial spacer 31 is removed.

When the sacrificial spacer 31 is a titanium nitride layer, a wetcleaning process using a mixed solution of sulfuric acid (H₂SO₄) andhydrogen peroxide (H₂O₂) is performed. This is referred to as a ‘CLN_B’cleaning.

Referring to FIG. 2K, the capping layer 37 is formed over the substratestructure. The capping layer 37 prevents the lifting of the bit lines34A due to the air gap 36. The capping layer 37 may be a nitride layersuch as a silicon nitride layer. The capping layer 37 hermetically sealsthe upper portion of the air gap 36.

According to the first exemplary embodiment of the present invention,the air gap 36 and the spacer 32 are between the storage node contactplugs 28A and 28B and the bit lines 34A. Since the air gap 36 is formedbetween the storage node contact plugs 28A and 28B and the bit lines34A, the parasitic capacitance between the storage node contact plugs28A and 28B and the bit lines 34A is decreased.

FIG. 3 is a cross-sectional view of a semiconductor device in accordancewith a second exemplary embodiment of the present invention.

Referring to FIG. 3, the isolation layer 22 is formed over thesemiconductor substrate 21. The isolation layer 22 defines activeregions 23. First landing plugs 24A and a second landing plug 24B areformed over the active regions 23. Over the first landing plugs 24A,storage node contact plugs 28A and 28B are formed. Over the secondlanding plug 24B, bit lines 45A are formed. The bit lines 45A isolatethe storage node contact plugs 28A and 28B from each other. The storagenode contact plugs 28A and 28B are formed as the bit lines 45A isolatedual storage node contact plugs. The bit lines 45A are formed by etchingan inter-layer insulation layer 25 to thereby form a damascene patternand then filling the inside of the damascene pattern. Therefore, the bitlines 45A are referred to as damascene bit lines. The damascene patternseparates the dual storage node contact plugs into storage node contactplugs 28A and 28B. A bit line hard mask layer pattern 46A is formed overthe bit lines 45A. A barrier layer pattern 44A is formed on the externalwalls and bottom surface of each bit line 45A. A first spacer 41A, anair gap 47, and a second spacer 43 are formed between the bit lines 45Aand the storage node contact plugs 28A and 28B. The first and secondspacers 41A and 43 may be a nitride layer such as a silicon nitride(Si₃N₄) layer. The storage node contact plugs 28A and 28B may be apolysilicon layer. A capping layer 48 hermetically sealing the upperportion of the air gap 47 is formed. A hard mask pattern 29A is formedin the upper portion of the storage node contact plugs 28A and 28B andthe inter-layer insulation layer 25.

According to the second exemplary embodiment of the present inventiondescribed above, the first spacer 41A, the air gap 47, and the secondspacer 43 are between the storage node contact plugs 28A and 28B and thebit lines 45A. To be specific, an insulation structure of Si₃N₄-airgap—Si₃N₄ (which is referred to as N-air gap—N, hereafter) where the airgap 47 is disposed between the first spacer 41A and the second spacer 43is formed.

The parasitic capacitance between the storage node contact plugs 28A and28B and the bit lines 45A may be decreased by forming the air gap 47between the storage node contact plugs 28A and 28B and the bit lines45A.

FIGS. 4A to 4I are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a second exemplaryembodiment of the present invention. In this second exemplary embodimentthe method for forming the damascene pattern 30 is the same as describedabove with reference to FIGS. 2A to 2C. Accordingly, a description ofthe method for the damascene pattern 30 in the second exemplaryembodiment is omitted, and FIG. 4A begins with the structure shown inFIG. 2C.

Referring to FIG. 4A, a first spacer layer 41 and a second spacer layer42 are stacked over a substrate structure including the damascenepattern 30. The first spacer layer 41 may be a silicon nitride layer.The second spacer layer 42 may be a titanium nitride

(TN) layer.

Referring to FIG. 4B, the first spacer layer 41 and the second spacerlayer 42 are etched selectively. The first spacer layer 41 and thesecond spacer layer 42 are etched through an etch-back process. As aresult, the first spacer 41A and a sacrificial spacer 42A are formed onthe sidewalls of the damascene pattern 30. The first spacer 41A isformed by performing an etch-back process onto the first spacer layer41, and the sacrificial spacer 42A is formed by performing an etch-backprocess onto the second spacer layer 42. When the etch-back process isperformed, the second spacer layer 42 is etched back first, and then thefirst spacer layer 41 is etched back.

Referring to FIG. 4C, a second spacer 43 is formed on the sidewalls ofthe sacrificial spacer 42A. The second spacer 43 may be a nitride layersuch as a silicon nitride layer. For example, the second spacer 43 maybe formed by depositing a nitride layer over the substrate structure,including the damascene pattern 30 with the sacrificial spacer 42A, andthen performing an etch-back process to remove select portions of thenitride layer.

The second spacer 43 formed on the sidewalls of the storage node contactplugs 28A and 28B may remain on the bottom surface. This prevents ashort from occurring between damascene bit lines 45A and the firstlanding plugs 24A. An additional mask is used to make the spacer 32remain on the bottom surface between the storage node contact plugs 28Aand 28B. The additional mask is a bit line contact mask that ispatterned to selectively expose the second landing plug 24B. The secondspacer 43 provides a bit line contact which exposes the surface of thesecond landing plug 24B. The first and second spacers 41A and 43together form a bit line spacer.

As described above, the second spacer 43 covers the sidewalls of thesacrificial spacer 42A, and a triple spacer which is formed of the firstspacer 41A, the sacrificial spacer 42A, and the second spacer 43 isformed on the sidewalls of the damascene pattern 30. When thesacrificial spacer 42A is a titanium nitride layer, and the first andsecond spacers 41A and 43 are silicon nitride layers, the triple spacerhas a structure of Si₃N₄-TiN—Si₃N₄ (which is referred to as an ‘N—TiN—N’structure hereafter). When the sacrificial spacer 42A is a titaniumnitride layer and the first spacer 41A is an oxide layer and the secondspacer 43 is a nitride layer, the triple spacer has a structure ofO—TiN—N.

Referring to FIG. 4D, a conductive layer is formed over the substratestructure to fill the damascene pattern 30, including the first spacer41A, the sacrificial spacer 42A, and the second spacer 43. Subsequently,an isolation process, such as a CMP process, is performed. As a resultof the isolation process, the conductive layer is isolated and portionsof the conductive layer remain in the damascene pattern 30. Here, theconductive layer includes a barrier layer 44 and a bit line conductivelayer 45. The bit line conductive layer 45 may be formed of metal suchas tungsten. The barrier layer 44 may be a titanium nitride (TIN) layer.

As described above, when the conductive layer including the barrierlayer 44 and the bit line conductive layer 45 is formed, the firstspacer 41A, the sacrificial spacer 42A, and the second spacer 43 remainbetween the storage node contact plugs 28A and 28B. In particular, thesacrificial spacer 42A remains between the first spacer 41A and thesecond spacer 43.

Referring to FIG. 4E, the bit line conductive layer 45 is recessed to acertain depth. As a result, the bit lines 45A, partially filling theinside of the damascene pattern 30, are formed. The bit lines 45A aredamascene bit lines. When the bit line conductive layer 45 is recessed,the barrier layer 44 may be recessed at the same time. As a result, thebarrier layer pattern 44A remains on the external walls and bottomsurface of the bit lines 45A.

When the bit line conductive layer 45 is recessed, an etch-back processis performed. During the etch-back process, the sacrificial spacer 42Amay be recessed to a certain depth. For example, when the barrier layer44 and the sacrificial spacer 42A are formed of the same material, theupper portion of the sacrificial spacer 42A is removed forming anotheropening that extends to a certain depth between the first spacer 41A andthe second spacer 43.

Referring to FIG. 4F, a bit line hard mask layer 46 is formed over thesubstrate structure including the bit lines 45A. The bit line hard masklayer 46 may be a nitride layer such as a silicon nitride layer. The bitline hard mask layer 46 gap-fills the upper portions of the bit lines45A, and also, gap-fills the upper portions of the sacrificial spacers42A.

Referring to FIG. 4G, the bit line hard mask layer 46 is planarized.Herein, the planarization of the bit line hard mask layer 46 isperformed targeting the upper portion of the sacrificial spacer 42A sothat the upper portion of the sacrificial spacer 42A is exposed. Theplanarization may be performed using a CMP process. After theplanarization, the bit line hard mask layer pattern 46A remains on theupper portions of the bit lines 45A. Also, a portion of the hard maskpattern 29 is planarized and the planarized hard mask pattern 29 isdenoted with reference numeral ‘29A’.

Referring to FIG. 4H, the sacrificial spacer 42A is selectively removed.As a result, the air gap 47 is formed between the storage node contactplugs 28A and 28B and the bit lines 45A. The sacrificial spacer 42A maybe removed through a wet etch process or a dry etch process. When thesacrificial spacer 42A is removed, the first and second spacers 41A and43, the storage node contact plugs 28A and 28B, the bit lines 45A, thebit line hard mask layer pattern 46A, and the inter-layer insulationlayer 25 are not damaged due to etch selectivity.

When the sacrificial spacer 42A is removed, an ‘N-air gap—N’ structureis formed between the storage node contact plugs 28A and 28B and the bitlines 45A.

Referring to FIG. 4I, the capping layer 48 is formed over the substratestructure. The capping layer 48 prevents the lifting of the bit lines45A due to the air gap 47. The capping layer 48 may be a nitride layersuch as a silicon nitride layer. The capping layer 48 hermetically sealsthe upper portion of the air gap 47.

According to the second exemplary embodiment of the present invention,the air gap 47 and the first and second spacers 41A and 43 are betweenthe storage node contact plugs 28A and 28B and the bit lines 45A. Sincethe air gap 47 is formed between the storage node contact plugs 28A and28B and the bit lines 45A, the parasitic capacitance between the storagenode contact plugs 28A and 28B and the bit lines 45A is decreased.

FIGS. 5A to 5C are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a third exemplaryembodiment of the present invention. The third exemplary embodiment issimilar to the second exemplary embodiment, except that the first spaceris an oxide layer. More specifically, steps shown in FIGS. 4A to 4H areincluded in the method of fabricating the semiconductor device inaccordance with the third exemplary embodiment. Accordingly, adescription of the steps shown in FIGS. 4A to 4H is omitted below, andFIG. 5A illustrates the same structure shown in FIG. 4H.

Referring to FIG. 5A, the air gap 47 is formed according to the methodillustrated in FIGS. 4A to 4H.

Referring to FIG. 5B, the first spacer 41A is selectively removed. As aresult, the air gap 47 is widened to obtain the air gap 49.

The air gap 49 is formed between the second spacer 43 and the storagenode contact plugs 28A and 28B. Together the second spacer 43 and theair gap 49 form an insulation structure between the storage node contactplugs 28A and 28B and the bit lines 45A. Therefore, when the secondspacer 43 is a nitride layer, the insulation structure may be referredto as an ‘air gap-N’ structure.

Referring to FIG. 5C, the capping layer 50 is formed over the substratestructure. The capping layer 50 prevents the lifting of the bit lines45A due to the air gap 49. The capping layer 50 hermetically seals theupper portion of the air gap 49.

According to the third exemplary embodiment of the present invention,the air gap 49 and the second spacer 43 are between the storage nodecontact plugs 28A and 28B and the bit lines 45A. The parasiticcapacitance between the storage node contact plugs 28A and 28B and thebit lines 45A is decreased by forming the air gap 49 between the storagenode contact plugs 28A and 28B and the bit lines 45A.

FIGS. 6A to 6K are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a fourth exemplaryembodiment of the present invention.

Referring to FIG. 6A, the isolation layer 52 is formed over thesemiconductor substrate 51. The isolation layer 52 is formed through awell-known Shallow Trench Isolation (STI) process. The isolation layer52 defines the active regions 53. Although not illustrated in FIG. 6A, aprocess for forming buried gates (BG) may be performed after theisolation layer 52 is formed. The buried gates may be formed through aconventional method for forming buried gates.

Subsequently, first landing plugs 54A to be coupled with storage nodecontact plugs and a second landing plug 54B to be coupled with a bitline are formed on the surface of the active regions 53. The firstlanding plugs 54A and the second landing plug 54B may be formed to beself-aligned to the isolation layer 52. The first landing plugs 54A andthe second landing plug 54B may be formed of a polysilicon layer.

According to another exemplary embodiment, the first landing plugs 54Aand the second landing plug 54B may be formed prior to the isolationlayer 52. For example, the first landing plugs 54A and the secondlanding plug 54B may be formed by forming a conductive layer to be usedas the first landing plugs 54A and the second landing plug 54B, and thenetching the conductive layer through an STI process. Subsequently,trenches are formed by using the first landing plugs 54A and the secondlanding plug 54B as etch barriers and etching the semiconductorsubstrate 51. Then, the isolation layer 52 can be formed by filling thetrenches.

Returning to the exemplary embodiment of FIG. 6A, after forming thefirst landing plugs 54A and the second landing plug 54B, the inter-layerinsulation layer 55 is formed over the resultant substrate structure.The inter-layer insulation layer 55 may be an oxide layer, such as BPSG(Boron Phosphorus Silicate Glass).

Next, the inter-layer insulation layer 55 is etched by using a storagenode contact mask 56 as an etch barrier. As a result, dual storage nodecontact holes 57 are formed. Each of the dual storage node contact holes57 simultaneously opens the first landing plugs 54A on the upperportions of neighboring active regions 53.

Referring to FIG. 6B, the storage node contact mask 56 is removed, andthen a dual storage node contact plug 58 filling the dual storage nodecontact holes 57 is formed. The dual storage node contact plug 58 isformed by depositing a tungsten layer and performing a ChemicalMechanical Polishing (CMP) or an etch-back process.

Referring to FIG. 6C, a damascene mask 59 is formed. The damascene mask59 is a mask designed to separate the dual storage node contact plug 58and to form a damascene pattern where bit lines are subsequently formed.The damascene mask 59 may be a photoresist pattern or a hard maskpattern. Hereafter, the damascene mask 59 is referred to as a hard maskpattern 59. The hard mask pattern 59 may be a nitride layer, such as asilicon nitride layer.

The dual storage node contact plug 58 and the inter-layer insulationlayer 55 are etched by using the hard mask pattern 59 as an etchbarrier. As a result, a damascene pattern 60 is formed, and the storagenode contact plugs 58A and 58B that are independent from each other dueto the damascene pattern 60 are formed. Also, the damascene pattern 60exposes the second landing plug 54B and the isolation layer 52. Thedamascene pattern 60 may be formed by etching the dual storage nodecontact plug 58 first and then etching the inter-layer insulation layer55. Alternatively, it is possible to form the damascene pattern 60 byetching the inter-layer insulation layer 55 first and then etching thedual storage node contact plug 58 or by simultaneously etching theinter-layer insulation layer 55 and the dual storage node contact plug58.

Referring to FIG. 6D, the sidewalls of the storage node contact plugs58A and 58B exposed by the damascene pattern 60 are oxidized. As aresult, a first spacer 61 is formed on the sidewalls of the storage nodecontact plugs 58A and 58B. Since the storage node contact plugs 58A and58B are tungsten layers, the first spacer 61 becomes a tungsten oxidelayer.

Referring to FIG. 6E, a sacrificial spacer 62 is formed on the sidewallsof the first spacer 61. The sacrificial spacer 62 may be a titaniumnitride layer. The sacrificial spacer 62 may be formed by depositing asacrificial spacer layer (e.g., a titanium nitride layer) over thesubstrate structure, including the damascene pattern 60 with the firstspacer 61, and then performing an etch-back process to remove portions(e.g., horizontal surfaces) of the sacrificial spacer layer.

A second spacer 63 is formed on the sidewalls of the sacrificial spacer62. The second spacer 63 may include a nitride layer such as a siliconnitride layer. The second spacer 63 may be formed by depositing a secondspacer layer (e.g., a nitride layer) over the substrate structure,including the damascene pattern 60 with the sacrificial spacer 62, andthen performing an etch-back process to remove portions (e.g., selecthorizontal surfaces) of the second spacer layer.

The second spacer 63 formed on the sidewalls of the storage node contactplugs 58A and 58B may remain on the bottom surface. The remaining secondspacer 63 prevents a short from occurring between damascene bit linesand the first landing plugs 54A. An additional mask is used to make thesecond spacer 63 remain on the bottom surface between the storage nodecontact plugs 58A and 58B. The additional mask is a bit line contactmask that is patterned to selectively expose the second landing plug54B. The second spacer 63 provides a bit line contact which exposes thesurface of the second landing plug 54B. Accordingly, the first andsecond spacers 61 and 63 become bit line spacers.

As described above, the second spacer 63 covers the sidewalls of thesacrificial spacer 62, and thus, a triple spacer, which includes thefirst to third spacers, is formed on the sidewalls of the damascenepattern 60. The sacrificial spacer 62 may be a titanium nitride layer,and the first spacer 61 may be a tungsten oxide layer. Where the secondspacer 63 is a silicon nitride layer, the triple spacer has a structureof ‘WO₃-TiN—Si₃N₄’.

Referring to FIG. 6F, a conductive layer is formed over the substratestructure to fill the damascene pattern 30 with the first spacer 61, thesacrificial spacer 62, and the second spacer 63 formed therein.Subsequently, the conductive layer remains inside the damascene pattern60 by performing an isolation process such as Chemical MechanicalPolishing (CMP). The conductive layer includes a barrier layer 64 and abit line conductive layer 65. The bit line conductive layer 64 may beformed of metal such as tungsten. The barrier layer 63 may be a titaniumnitride (TiN) layer.

As described above, when the conductive layer including the barrierlayer 64 and the bit line conductive layer 65 is formed, the firstspacer 61, the sacrificial spacer 62, and the second spacer 63 remainbetween the conductive layer and the storage node contact plugs 58A and58B.

Referring to FIG. 6G, the bit line conductive layer 65 is recessed to acertain depth. As a result, the bit lines 65A partially filling theinside of the damascene pattern 60 are formed. The bit lines 65A becomedamascene bit lines. When the bit line conductive layer 65 is recessed,the barrier layer 64 is simultaneously recessed as well. As a result, abarrier layer pattern 64A remains on the external walls and bottomsurface of the bit lines 65A.

When the bit line conductive layer 65 is recessed, an etch-back processis performed. During the etch-back process, the sacrificial spacer 62may be recessed to a certain depth. For example, when the barrier layer64 and the sacrificial spacer 62 are formed of the same material, theupper portion of the sacrificial spacer 62 is removed forming anotheropening that extends to a certain depth between the second spacer 63 andthe hard mask pattern 59.

Referring to FIG. 6H, a bit line hard mask layer 66 is formed over thesubstrate structure including the bit lines 65A. The bit line hard masklayer 66 may be a nitride layer such as a silicon nitride layer. The bitline hard mask layer 66 gap-fills the upper portion of the bit lines65A, and also, gap-fills the upper portion of the sacrificial spacer 62.

Referring to FIG. 6I, the bit line hard mask layer 66 is planarized.Herein, the planarization of the bit line hard mask layer 66 isperformed targeting the upper portion of the sacrificial spacer 62 sothat the upper portion of the sacrificial spacer 62 is exposed. Theplanarization may be performed using a CMP process. As a result of theplanarization, the bit line hard mask layer pattern 66A remains on theupper portion of the bit lines 65A. Also, a portion of the hard maskpattern 59 is planarized. The remaining hard mask pattern 59 is denotedwith reference numeral 59A.

Referring to FIG. 6J, the sacrificial spacer 62 is selectively removed,As a result, the air gap 67 is formed between the storage node contactplugs 58A and 58B and the bit lines 55A. The sacrificial spacer 62 maybe removed through a wet etch process or a dry etch process. When thesacrificial spacer 62 is removed, the first and second spacers 61 and63, the storage node contact plugs 58A and 58B, the bit lines 65A, thebit line hard mask layer pattern 66A, and the inter-layer insulationlayer 65 are not damaged due to etch selectivity.

When the sacrificial spacer 62 is a titanium nitride layer, a wetcleaning process using a mixed solution of sulfuric acid (H₂SO₄) andhydrogen peroxide (H₂O₂) is performed.

When the sacrificial spacer 62 is removed as described above, aninsulation layer of ‘WO₃-air gap-Si₃N₄’ may be formed between thestorage node contact plugs 58A and 58B and the bit lines 65A.

Referring to FIG. 6K, a capping layer 68 is formed over the substratestructure. The capping layer 68 prevents the lifting of the bit lines65A due to the air gap 67. The capping layer 68 may be a nitride layersuch as a silicon nitride layer. The capping layer 68 hermetically sealsthe upper portion of the air gap 67.

According to the fourth exemplary embodiment of the present invention,the air gap 67 and the first and second spacers 61 and 63 are betweenthe storage node contact plugs 58A and 58B and the bit lines 65A. Sincethe air gap 67 is formed between the storage node contact plugs 58A and58B and the bit lines 65A, the parasitic capacitance between the storagenode contact plugs 58A and 58B and the bit lines 65A is decreased.

FIGS. 7A to 7G are cross-sectional views illustrating a method forfabricating a semiconductor device in accordance with a fifth exemplaryembodiment of the present invention. In the fifth embodiment, theprocess before the first spacer is formed is the same as the fourthexemplary embodiment. Hereafter, method of fabricating the fifthexemplary embodiment is described beginning from the formation of thefirst spacer 61. That is, FIG. 7A shows the resultant structure of FIGS.6A to 6D.

Referring to FIG. 7A, the sidewalls of the storage node contact plugs58A and 58B exposed by the damascene pattern 60 are oxidized. As aresult, a sacrificial spacer 81 is formed on the sidewalls of thestorage node contact plugs 58A and 58B. When the storage node contactplugs 58A and 58B are tungsten layers, the sacrificial spacer 81 becomesa tungsten oxide layer.

Referring to FIG. 7B, a spacer 82 is formed on the sidewalls of thesacrificial spacer 81. The spacer 82 may be a nitride layer such as asilicon nitride layer. The spacer 82 may be formed by depositing aspacer layer (e.g., a nitride layer) over the substrate structure,including the damascene pattern 60 with the sacrificial spacer 81, andthen performing an etch-back process to remove select portions of thespacer layer.

The spacer 82 formed on the sidewalls of the storage node contact plugs58A and 58B may remain on the bottom surface. The remaining spacer 82prevents a short from occurring between damascene bit lines and thefirst landing plugs 54A. An additional mask is used to make the spacer82 remain on the bottom surface between the storage node contact plugs58A and 58B. The additional mask is a bit line contact mask that ispatterned to selectively expose the second landing plug 54B. The spacer82 provides a bit line contact which exposes the surface of the secondlanding plug 54B. The spacer 82 becomes a bit line spacer.

As described above, a double spacer which is formed of the sacrificialspacer 81 and the spacer 82 is formed on the sidewalls of the damascenepattern 60. When the sacrificial spacer 81 is a tungsten oxide layer andthe spacer 82 is a silicon nitride layer, the double spacer has astructure of ‘WO₃-Si₃N₄’.

Referring to FIG. 7C, a conductive layer is formed over the substratestructure to fill the damascene pattern 60, including the sacrificialspacer 81 and the spacer 82 formed therein. Subsequently, an isolationprocess, such as Chemical Mechanical Polishing (CMP) process, isperformed. As a result of the isolation process, the conductive layer isisolated and portions of the conductive layer remain in the damascenepattern 60. Here, the conductive layer includes a barrier layer 83 and abit line conductive layer 84. The bit line conductive layer 84 may beformed of metal such as tungsten. The barrier layer 83 may be a titaniumnitride (TiN) layer.

As described above, when the conductive layer including the barrierlayer 83 and the bit line conductive layer 84 is formed, the sacrificialspacer 81 and the spacer 82 remain between the conductive layer and thestorage node contact plugs 58A and 58B.

Referring to FIG. 7D, the bit line conductive layer 84 is recessed to acertain depth. As a result, the bit lines 84A, partially filling theinside of the damascene pattern 60, are formed. The bit lines 84A becomedamascene bit lines. When the bit line conductive layer 84 is recessed,the barrier layer 83 may be simultaneously recessed as well. As aresult, a barrier layer pattern 83A remains on the external walls andbottom surface of the bit lines 84A.

Referring to FIG. 7E, a bit line hard mask layer 85 is formed over thesubstrate structure including the bit lines 84A. The bit line hard masklayer 85 may be a nitride layer such as a silicon nitride layer. The bitline hard mask layer 85 gap-fills the upper portion of the bit lines84A.

Subsequently, the bit line hard mask layer 85 is planarized. Herein, theplanarization of the bit line hard mask layer 85 is performed targetinga hard mask pattern 59 so that the hard mask pattern 59 is removed. Theplanarization may be performed using a CMP process. As a result of theplanarization, the bit line hard mask layer 85 remains on the upperportion of the bit lines 84A. Since the hard mask pattern 59 is removed,the upper portion of the sacrificial spacer 81 is exposed.

Referring to FIG. 7F, the sacrificial spacer 81 is selectively removed.As a result, the air gap 86 is formed between the storage node contactplugs 58A and 58B and the bit lines 84A. The sacrificial spacer 81 maybe removed through a wet etch process or a dry etch process.

When the sacrificial spacer 81 is removed as described above, aninsulation layer with an ‘air gap—Si₃N₄’ structure may be formed betweenthe storage node contact plugs 58A and 58B and the bit lines 84A.

Referring to FIG. 7G, the capping layer 87 is formed over the substratestructure. The capping layer 87 prevents the lifting of the bit lines84A due to the air gap 86. The capping layer 87 may be a nitride layersuch as a silicon nitride layer. The capping layer 87 hermetically sealsthe upper portion of the air gap 86.

According to the fifth exemplary embodiment of the present invention,there is an air gap 86 between the storage node contact plugs 58A and58B and the bit lines 84A. Since the air gap 86 is formed between thestorage node contact plugs 58A and 58B and the bit lines 84A, theparasitic capacitance between the storage node contact plugs 58A and 58Band the bit lines 84A is decreased.

FIG. 8A is a plan view of a semiconductor device in accordance with asixth exemplary embodiment of the present invention, and FIG. 8B is across-sectional view of the semiconductor device of FIG. 8A taken alonga line B-B′.

Referring to FIGS. 8A and 8B, an isolation layer 92 is formed over asemiconductor substrate 91. The isolation layer 92 defines activeregions 93. Landing plugs 94 are formed over the active regions 93. Overthe landing plugs 94, storage node contact plugs 95 are formed. Thestorage node contact plugs 95 are isolated by bit lines 97. The bitlines 97 are formed by etching the storage node contact plugs 95 tothereby form a damascene pattern, and then filling the inside of thedamascene pattern. Therefore, the bit lines 97 are referred to asdamascene bit lines. A bit line hard mask layer 99 is formed over thebit lines 97. A barrier layer 96 is formed on the sidewalls and bottomsurfaces of the bit lines 97.

An air gap 100 and a spacer 98 are formed between the bit lines 97 andthe storage node contact plugs 95. The spacer 98 includes a siliconnitride layer, a silicon oxide layer, a tungsten oxide layer, or astacked structure including a combination of these layers. As for amethod of forming the air gap 100 and the spacer 98, any one among thefirst to fifth exemplary embodiments can be referred to. In FIG. 8A, thegates formed in the upper and lower portions of buried gates (BG) aregates of an isolation transistor for isolating adjacent cells from eachother.

The storage node contact plugs 95 may be formed of a polysilicon layeror a tungsten layer. A hard mask pattern 101 is formed over the storagenode contact plugs 95. A capping layer 102 for hermetically sealing theupper portion of the air gap 100 is also formed. Although notillustrated in FIG. 8B, landing plugs to contact the bit lines 97 areformed over the active regions 93, and buried gates are formed in adirection crossing the active regions 93.

According to the sixth exemplary embodiment, the air gap 100 and thespacer 98 are between the storage node contact plugs 95 and the bitlines 97. The parasitic capacitance between the storage node contactplugs 95 and the bit lines 97 may be decreased by forming the air gap100 between the storage node contact plugs 95 and the bit lines 97.

In the first to sixth exemplary embodiments described above, in additionto titanium nitride and tungsten oxide, an aluminum oxide (Al₂O₃) layeror a silicon (Si) layer may be used as a material for forming asacrificial spacer, which is removed to form the air gap.

According to exemplary embodiments of the present invention describedabove, parasitic capacitance may be decreased due to a low dielectricrate of an air gap formed between bit lines and storage node contactplugs.

Therefore, a DRAM device which could not be previously realized due to alimitation in storage capacitance Cs may now be obtained for use insmall-sized semiconductor devices. Also, when it is applied to a devicehaving a certain storage capacitance Cs, a sensing margin may beincreased to thereby improve device characteristics and throughput.

While the present invention has been described with respect to thespecific embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

1. A semiconductor device, comprising: a plurality of first conductivepatterns separated by a damascene pattern; a second conductive patternburied in the damascene pattern; and a spacer comprising an air gapbetween the second conductive pattern and the first conductive patterns.2. The semiconductor device of claim 1, further comprising: a cappinglayer configured to hermetically seal an upper portion of the air gap.3. The semiconductor device of claim 1, wherein the spacer furthercomprises a silicon nitride layer.
 4. The semiconductor device of claim1, wherein the spacer further comprises a first spacer and a secondspacer, and the air gap is disposed between the first spacer and thesecond spacer.
 5. The semiconductor device of claim 4, wherein the firstspacer and the second spacer comprise silicon nitride layers.
 6. Thesemiconductor device of claim 4, wherein the first spacer comprises asilicon nitride layer and the second spacer comprises an oxide layer. 7.The semiconductor device of claim 6, wherein the oxide layer comprises asilicon oxide layer or a tungsten oxide layer.
 8. The semiconductordevice of claim 1, wherein the first conductive patterns comprisestorage node contact plugs, and the second conductive pattern comprisesa bit line.
 9. The semiconductor device of claim 8, wherein the storagenode contact plugs comprise a polysilicon layer or a tungsten layer. 10.The semiconductor device of claim 1, wherein the spacer furthercomprises a bottom surface that extends underneath the second conductivepattern.
 11. A method for forming a semiconductor device, comprising:forming a first conductive layer; forming a damascene pattern and firstconductive patterns by etching the first conductive layer; forming aspacer on sidewalls of the damascene pattern; forming a secondconductive pattern buried in the damascene pattern; and forming an airgap between the first conductive patterns and the second conductivepattern by etching a portion of the spacer.
 12. The method of claim 11,further comprising: forming a capping layer for hermetically sealing anupper portion of the air gap.
 13. The method of claim 11, wherein theforming of the damascene pattern comprises: forming a damascene mask;and etching the first conductive layer using the damascene mask as anetch barrier.
 14. The method of claim 11, wherein the forming of thespacer comprises: forming multiple spacers comprising a sacrificialspacer selected from the group consisting of a titanium nitride layer,an aluminum oxide layer, and a silicon layer.
 15. The method of claim14, wherein the air gap is formed by removing the sacrificial spacer.16. The method of claim 11, wherein the forming of the second conductivepattern comprises: forming a conductive layer filling the damascenepattern with the spacer formed therein; and forming the secondconductive pattern by recessing the conductive layer.
 17. The method ofclaim 16, further comprising forming a hard mask layer over the secondconductive pattern.
 18. The method of claim 17, wherein the forming ofthe air gap comprises: planarizing the hard mask layer to expose anupper portion of a sacrificial spacer included within the spacer; andremoving the sacrificial spacer through a wet etch process or a dry etchprocess.
 19. The method of claim 11, wherein the first conductivepatterns comprise storage node contact plugs, and the second conductivepattern comprises a bit line.
 20. The method of claim 19, wherein thestorage node contact plugs comprise a polysilicon layer or a tungstenlayer.
 21. A method for forming a semiconductor device, comprising:forming a first conductive layer; forming a damascene pattern and firstconductive patterns by etching the first conductive layer; forming adual spacer, comprising a sacrificial spacer and a spacer, on sidewallsof the damascene pattern; forming a second conductive pattern buried inthe damascene pattern; and forming an air gap by etching the sacrificialspacer.
 22. The method of claim 21, wherein the forming of the dualspacer comprises: forming the sacrificial spacer on the sidewalls of thedamascene pattern; and forming the spacer on sidewalls of thesacrificial spacer.
 23. The method of claim 21, wherein the sacrificialspacer is a titanium nitride layer, and the spacer is a silicon nitridelayer.
 24. The method of claim 21, wherein the sacrificial spacer is analuminum oxide layer or a silicon layer, and the spacer is a siliconnitride layer.
 25. The method of claim 21, wherein the first conductivepatterns comprise storage node contact plugs, and the second conductivepattern comprises a bit line.
 26. The method of claim 25, wherein thestorage node contact plugs comprise a polysilicon layer.
 27. The methodof claim 21, wherein in the forming of the dual spacer, the sacrificialspacer is formed by oxidizing a sidewall of the first conductivepatterns exposed by the damascene pattern.
 28. The method of claim 27,wherein the first conductive patterns comprise a tungsten layer, and thesacrificial spacer comprises a tungsten oxide layer.
 29. The method ofclaim 21, further comprising: forming a capping layer for hermeticallysealing an upper portion of the air gap.
 30. The method of claim 21,wherein the forming of the second conductive pattern further comprises:forming a conductive layer filling the damascene pattern with the dualspacer formed therein; and forming the second conductive pattern byrecessing the conductive layer.
 31. The method of claim 30, furthercomprising forming a hard mask layer over the second conductive pattern.32. A method for forming a semiconductor device, comprising: forming afirst conductive layer; forming a damascene pattern and first conductivepatterns by etching the first conductive layer; forming a triple spacer,comprising a first spacer, a sacrificial spacer, and a second spacer, onsidewalls of the damascene pattern; forming a second conductive patternburied in the damascene pattern; and forming an air gap by etching thesacrificial spacer.
 33. The method of claim 32, further comprising:forming a capping layer for hermetically sealing an upper portion of theair gap.
 34. The method of claim 32, wherein the forming of the secondconductive pattern further comprises: forming a conductive layer fillingthe damascene pattern with the triple spacer formed therein; and formingthe second conductive pattern by recessing the conductive layer.
 35. Themethod of claim 34, further comprising forming a hard mask layer overthe second conductive pattern.
 36. The method of claim 32, wherein thesacrificial spacer comprises any one selected from the group consistingof a titanium nitride layer, an aluminum oxide layer, and a siliconlayer.
 37. The method of claim 32, wherein the first spacer comprises asilicon oxide layer, and the sacrificial spacer comprises a titaniumnitride layer, and the second spacer comprises a silicon nitride layer.38. The method of claim 32, further comprising: removing the firstspacer after the etching of the sacrificial spacer.
 39. The method ofclaim 32, wherein the first spacer comprises a tungsten oxide layer, andthe sacrificial spacer comprises a titanium nitride layer, and thesecond spacer comprises a silicon nitride layer.
 40. The method of claim32, wherein the forming of the triple spacer comprises: stacking a firstspacer layer and a second spacer layer over a substrate structureincluding the damascene pattern; forming the sacrificial spacer and thefirst spacer by selectively etching the second spacer layer and thefirst spacer layer; forming a third spacer layer over a substratestructure comprising the sacrificial spacer; and forming the secondspacer by selectively etching the third spacer layer.
 41. The method ofclaim 32, wherein in the forming of the triple spacer, the first spaceris formed by oxidizing a sidewall of the first conductive patternsexposed by the damascene pattern.
 42. The method of claim 41, whereinthe first conductive patterns comprise a tungsten layer, and the firstspacer comprises a tungsten oxide layer.
 43. The method of claim 32,wherein the first conductive patterns comprise storage node contactplugs, and the second conductive pattern comprises a bit line.
 44. Themethod of claim 43, wherein the storage node contact plugs comprise apolysilicon layer or a tungsten layer.